Class Notes For Section C (Bishop)
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ECE 440 Course Schedule and Outline |
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Date |
Topic |
Assigned Readings from Streetman 5th Edition |
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1 |
W 01/19 |
Introduction to the course – application of physical electronics |
Read Information Packet |
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2 |
F 01/21 |
Semiconductors, crystal structure 1.1 Semiconductor Materials – IV’s III-V’s growth 1.2 Crystal Lattices |
§'s 1.1, 1.2, Read §'s 1.3.1, 1.4
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3 |
M 01/24 |
Bonding forces and energy bands in solids 3.1.1 Bonding Forces in Solids 3.1.2 Energy Bands 3.1.3 Metals, Semiconductors, and Insulators |
(Review topics in Chap. 2 from Phys. 114 as required) §'s 3.1, 3.1.1, 3.1.2, 3.1.3 |
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4 |
W 01/26 |
Energy bands (cont’d) and charge carriers in semiconductors 3.1.4 Direct and Indirect Semiconductors 3.2.1 Electrons and Holes 3.2.2 Effective Mass |
§'s 3.1.4, 3.2.1, 3.2.2
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5 |
F 01/28 |
Intrinsic material, extrinsic material 3.2.3 Intrinsic Material 3.2.4 Extrinsic Material |
§'s 3.2.3, 3.2.4
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6 |
M 01/31 |
3.3.1 The Fermi level 3.3.2 Electron and Hole Concentrations at Equilibrium |
§'s 3.3.1, 3.3.2 |
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7 |
W 02/02 |
Carrier concentrations (Cont'd) and the
Temperature dependence 3.3.2 Electron and Hole Concentrations at Equilibrium 3.3.3 Temperature Dependence of Carrier Concentrations 3.3.4 Compensation and Space Charge Neutrality |
§'s 3.3.2, 3.3.3, 3.3.4
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8 |
F 02/04 |
Drift of carriers in electric fields 3.4.1 Conductivity and Mobility 3.4.2 Drift and Resistance |
§'s 3.4.1, 3.4.2, 4.3.4
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9 |
M 02/07 |
Temperature, impurity concentration, and high electric field effects on mobility 3.4.3 Effects of Temperature and Doping on Mobility 3.4.4 High-Field Effects |
§'s 3.4.3, 3.4.4, 3.4.5
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10 |
W 02/09 |
3.4.5 The Hall Effect |
§ 3.4.5
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11 |
F 02/11 |
Optical absorption and luminescence / Carrier Generation and Recombination 4.1 Optical Absorption 4.3.1 Direct Recombination of Electrons and Holes |
§'s 4.1, 4.2, 4.3.1
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12 |
M 02/14 |
Carrier Generation and Recombination (Cont'd) and photo-conductivity 4.3.2 Indirect Recombination: Trapping 4.3.3 Steady State Carrier Generation; Quasi-Fermi Levels 4.3.4 Photoconductive Devices |
§'s 4.3.2, 4.3.3
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13 |
W 02/16 |
4.4.1 Diffusion Processes 4.4.2 Diffusion and Drift of Carriers |
§'s 4.4, 4.4.1,4.4.2
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14 |
F 02/18
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Diffusion of carriers (Cont'd), 4.4.2 Diffusion and Drift of Carriers,Built-in Fields 4.4.3 Diffusion and Recombination; |
§'s 4.4.2, 4.4.3
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15 |
M 02/21 |
Steady state carrier injection; diffusion length 4.4.4 Steady State Carrier Injection; Diffusion Length |
§ 4.4.4
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16 |
W 02/23 |
P-N junctions in equilibrium, contact 5.1 Fabrication of p-n Junctions, 5.2 Equilibrium Condition, 5.2.1 The Contact Potential |
Read § 5.1 Study §'s 5.2, 5.2.1
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Th 02/24 |
HOUR EXAM #1 (Chaps. 1, 3 & 4) combined sections, 7:00 - 9:00 PM DCL 1310 and 1320, Chem Annex 112 |
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17 |
F 02/25 |
No class |
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18 |
M 02/28 |
5.2.2 Equilibrium Fermi Levels 5.2.3 Space Charge at a Junction |
§’s 5.2.2, 5.2.3
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19 |
W 03/02 |
Current flow in a P-N junction 5.3. Forward- and Reverse-Biased Junctions; Steady State Conditions 5.3.1 Qualitative Description of Current Flow at a Junction |
§’s 5.3, 5.3.1
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20 |
F 03/04 |
Carrier injection, the diode equation 5.3.2 Carrier Injection |
§ 5.3.2
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21 |
M 03/07 |
Minority and majority carrier currents 5.3.2 Carrier Injection 5.3.3 Reverse Bias |
§ 5.3.3 |
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22 |
W 03/09 |
5.4 Reverse-Bias Breakdown 5.4.1 Zener Breakdown 5.4.2 Avalanche Breakdown 5.4.3 Rectifiers 5.4.4The breakdown Diodes |
§’s 5.4, 5.4.1, 5.4.2, 5.4.3, 5.4.4.
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23 |
F 03/11 |
No class (EOH) |
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24 |
M 03/14 |
Stored charges, diffusion capacitance and 5.5.4 Capacitance of p-n Junctions |
§ 5.5.4
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25 |
W 03/16 |
5.7.1 Schottky Barrier 5.7.2 Rectifying Contacts 5.7.3 Ohmic Contacts 5.7.4 Typical Schottky Barriers |
§'s 5.7, 5.7.1, 5.7.2, 5.7.3, 5.7.4
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26 |
F 03/18 |
Handout on narrow-base diode |
Review §’s 5.3, 5.3.1, 5.3.2 |
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03/21 --- 03/25 |
No Classes (Spring Break) |
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27 |
M 03/28 |
Introduction to bipolar junction transistor Handout on BJT Fundamentals |
§’s 6.1.1, 6.1.2, 7.1, 7.2, 7.3 and handout |
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28 |
W 03/30 |
Bipolar junction transistor (Cont'd), definitions terminal currents –-- straight-line approximation Handout on BJT specifics |
§’s 7.4.1, 7.4.2 and handout |
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29 |
F 04/01 |
Bipolar junction transistor (Cont'd), Handout on common-emitter amplifier and small-signal circuit |
§’s 7.4.2, 7.4.3, 7.4.4 and handout
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30 |
M 04/04 |
Bipolar junction transistor (Cont'd) Handout on Ebers Moll equation |
§’s 7.4.2, 7.4.3, 7.4.4 and handout |
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31 |
W 04/06 |
Metal-insulator-semiconductor FET 6.4.1 Basic Operation 6.4.2 The Ideal MOS Capacitor |
§’s 6.4.1, 6.4.2
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Th 04/07 |
HOUR EXAM #2 (Chaps. 1, 3, 4, 5 & 7) combined sections 7:00 – 9:00 p.m. Everitt 151, MSEB 100 |
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32 |
F 04/08 |
No class |
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33 |
M 04/11 |
6.4.2 The Ideal MOS Capacitor |
§ 6.4.2
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34 |
W 04/13 |
6.4.3 Effects of Real Surfaces (Flatband voltage) 6.4.4 Threshold Voltage |
§’s 6.4.2, 6.4.3
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35 |
F 04/15 |
6.4.5 MOS Capacitance-Voltage Analysis |
§’s 6.4.4, 6.4.5
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36 |
M 04/17 |
6.5.1 Output Characteristics 6.5.2 Transfer Characterisitics 6.5.3 Mobility Model |
§’s 6.5.1, 6.5.2, 6.5.3,
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37 |
W 04/20 |
6.5.4 Short Channel MOSFET I-V Characteristics 6.5.5 Control of Threshold Voltage |
§'s 6.5.4, 6.5.5
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38 |
F 04/22 |
Small-signal analysis Resistive load |
§ 6.5.8, |
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39 |
M 04/25 |
MOSFET (Cont'd): Resistive load-NMOSFET-inverter CMOS inverter (Integrated Circuits) |
§'s 9.3.1, 9.5.1 |
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40 |
M 04/25 |
Resistive load-NMOSFET-common-source amplifier |
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41 |
F 04/29 |
Optoelectronic Devices (Photodiodes) 3.1.5 Variation of Energy Bands with Alloy Composition 5.8 Heterojunctions 8.1.1 Current and Voltage in an Illuminated Junction |
§'s 3.1.5, 5.8, 8.1.1 |
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42 |
M 05/02 |
Optoelectronic devices (cont’d) 8.1.2 Solar Cells 8.1.3 Photodetectors 8.2 Light-Emitting Diodes 8.4 Semiconductor Lasers |
§'s 8.1.2, 8.1.3, 8.1.4 §'s 8.2.1, 8.2.2, 8.2.3, §'s 8.4.1, 8.4.2, 8.4.3, 8.4.4, 8.4.5 |
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43 |
W 05/04 |
Review |
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44 |
F 05/06- F 05/13 |
FINAL EXAM, (Chaps. 1, 3, 4, 5, 6, 7&8) Time and place to be announced |
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